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Proceedings Paper

Variation of threshold current with well-barrier hole-burning effect in quantum well lasers
Author(s): Hussain Arbab Tafti; Fatima N. Farokhrooz; K. K. Kamath; P. R. Vaya
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Paper Abstract

Well-barrier (W-B) hole burning in quantum well lasers is argued to be a consequence of the carrier build up in the barrier during the capture and release of carriers by the quantum well. The rate in this process are characterized by a capture time ((tau) c) and by the in/out ratio ((eta) ) defined as the ratio of the capture and release times for carriers into and out of the well region. In this paper a circuit model to represent W-B hole burning that is responsible for a large change in the threshold current density have been developed from the ratio equations. The model is simulated using the circuit simulation program SPICE for various values of (eta) and compared for a QW with and without W-B barrier hole burning.

Paper Details

Date Published: 24 April 1995
PDF: 6 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206894
Show Author Affiliations
Hussain Arbab Tafti, Anna Univ. (India)
Fatima N. Farokhrooz, Indian Institute of Technology (India)
K. K. Kamath, Indian Institute of Technology (India)
P. R. Vaya, Indian Institute of Technology (India)

Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

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