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Proceedings Paper

Molecular beam epitaxial growth of InSb p-i-n photodetectors on GaAs and Si
Author(s): Erick J. Michel; R. Peters; Steven Slivken; Christopher Louis Jelen; P. Bove; Jianren Xu; Ian T. Ferguson; Manijeh Razeghi
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Paper Abstract

High quality InSb has been grown by Molecular Beam Epitaxy and optimized using Reflection High Energy Electron Diffraction. A 4.8 micrometers InSb layer grown on GaAs at a growth temperature of 395 degree(s)C and a III/V incorporation ratio of 1:1.2 had an X-ray rocking curve FWHM of 158 arcsec and a Hall mobility of 92300 cm2V-1s-1 at 77 K, the best reported to date for InSb nucleated directly onto GaAs. InSb p-i-n structures of 5.8 micrometers grown under the same conditions demonstrated a X-ray Full Width at Half Maximum of 101 arcsec and 131 arcsec for GaAs and Si substrates, respectively, and exhibited excellent uniformity of +/- 3 arcsec over a 3' substrate. Prototype InSb p-i-n detectors on Si have been fabricated and have demonstrated photovoltaic response at 6.5 micrometers up to 200 K. These p-i-n detectors have also exhibited the highest D* for a device grown onto Si.

Paper Details

Date Published: 24 April 1995
PDF: 10 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206888
Show Author Affiliations
Erick J. Michel, Northwestern Univ. (United States)
R. Peters, Northwestern Univ. (United States)
Steven Slivken, Northwestern Univ. (United States)
Christopher Louis Jelen, Northwestern Univ. (United States)
P. Bove, Northwestern Univ. (United States)
Jianren Xu, Northwestern Univ. (United States)
Ian T. Ferguson, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

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