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Proceedings Paper

Overview of OMVPE optoelectronic material growth at the Jet Propulsion Laboratory
Author(s): James Singletery
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Paper Abstract

Recent advances in the development of high purity starting materials and OMVPE reactor design are quickly making OMVPE technology the technique of choice for the manufacturing of epitaxial material needed for optoelectronic devices. Within the past year, at the Jet Propulsion Laboratory we have used a single state-of-the-art AIXTRON 200/4 OMVPE reactor to produce high quality optoelectronic devices from three different material systems; InGaAsP/InP, AlInAs/InAs and AlGaAs/GaAs. Within the InGaAsP/InP family of materials we have been able to develop a regrowth protocol to preserve first order DFB gratings, with a grating depth of 400 degree(s)a. In addition, we have been able to fabricate InGaAs(P)/InP heterostructures with near monolayer abruptness. However, most important, we have been able to develop a dual flow adjustment scheme that results in lattice matched and wavelength matched InGaAsP layers within six to seven iterations of the growth parameters.

Paper Details

Date Published: 24 April 1995
PDF: 8 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206884
Show Author Affiliations
James Singletery, Jet Propulsion Lab. (United States)

Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

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