Share Email Print
cover

Proceedings Paper

III-V semiconductors for midinfrared lasers: progress and future trends
Author(s): Michael W. Prairie
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Emerging technologies such as spectroscopic gas sensing can benefit greatly by the development of robust, high-power semiconductor lasers emitting in the mid-infrared spectrum. Great progress has been made with these lasers, especially at wavelengths shorter than about 3 micrometers . Lasers with wavelengths longer than about 3 micrometers , however, suffer from nonradiative recombination mechanisms. As such, they continue to operate with modest power levels at temperatures below 150 K. Practical systems, however, demand higher- temperature operation, preferably above 250 K. The challenge, then, is to suppress the nonradiative recombination mechanisms while enhancing light emission of these narrow- bandgap materials. This paper outlines the progress made to date, including material-growth advances and device-structure designs which have enabled significant advances in the technology. The obstacles to higher-temperature operation, such as Auger recombination, will be identified. The tools being used to overcome these obstacles will also be discussed, including band-structure engineering. Finally, future research in this fertile area will be suggested which could augment current efforts.

Paper Details

Date Published: 24 April 1995
PDF: 11 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206882
Show Author Affiliations
Michael W. Prairie, Air Force Phillips Lab. (United States)


Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

© SPIE. Terms of Use
Back to Top