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Proceedings Paper

Optoelectronic devices based on GaN, AlGaN, InGaN homo-heterojunctions and superlattices
Author(s): Mohamed Asif Khan; Q. Chen; C. J. Sun; Michael S. Shur; M. F. MacMillan; Robert P. Devaty; W. J. Choyke
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Paper Abstract

We describe the deposition and characterization of single layers, homo-heterojunctions and superlattices of the AlxGa1-xN and InxGa1-xN material systems. Measurements are discussed indicating of 2D electron gas at heterojunction interfaces. Several photonic devices such as UV detectors, quarter wave reflector stacks, light emitting diodes and optically pumped lasing cavities are also described.

Paper Details

Date Published: 24 April 1995
PDF: 11 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206878
Show Author Affiliations
Mohamed Asif Khan, APA Optics, Inc. (United States)
Q. Chen, APA Optics, Inc. (United States)
C. J. Sun, APA Optics, Inc. (United States)
Michael S. Shur, Univ. of Virginia (United States)
M. F. MacMillan, Univ. of Pittsburgh (United States)
Robert P. Devaty, Univ. of Pittsburgh (United States)
W. J. Choyke, Univ. of Pittsburgh (United States)


Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

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