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Proceedings Paper

Semiconductors of the future, and the future is now!
Author(s): Max N. Yoder
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Paper Abstract

The refractory or wide bandgap semiconductors are replacing gallium arsenide (GaAs) as the semiconductor of the future and they are doing it now. These semiconductors exhibit many unusual properties that are just now being exploited. Their exploitation is expected to engender many new device and electromagnetic systems concepts. Already transistors of these materials have exhibited the highest power densities of any RF transistor, transistor operation to 80 GHz, the first and the most efficient blue light emitting diodes, and negative electron affinity properties rendering them with ideal properties as cold cathodes. Among the most recently discovered of these properties is that of electron transport at energy levels (velocities) orders of magnitude greater than their bandgaps and--unlike conventional semiconductors--are seemingly not heavily scattered by optical phonons. This property is expected to lead not only to much higher frequency devices but to a new class of optical emitters as well.

Paper Details

Date Published: 24 April 1995
PDF: 5 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206877
Show Author Affiliations
Max N. Yoder, Office of Naval Research (United States)


Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

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