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Proceedings Paper

Damage-free indium-tin-oxide contacts to indium-phosphide-based devices
Author(s): Alain Azema; Corinne Coutal; Jean-Claude Roustan; Stephen Taylor; Andre Leycuras
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Paper Abstract

Indium tin oxide (ITO) thin films would be highly useful as ohmic contacts for a wide range of optoelectronic applications because they provide low resistance and are optically transparent. We have investigated in particular the ITO/InP system for application to homoepitaxial InP solar cell. We have deposited ITO by excimer laser ablation in low temperature (250 degree(s)C) without any additional processing. Results have been highly encouraging: transmission properties are comparable to those obtained with other technics and measurements on solar cells indicate that the electrical properties are also satisfactory, a conversion efficiency of > 13% have been obtained with unoptimized contacts and no antireflection coating. Hall measurements have given carriers concentration and mobility, and Auger profilometry has revealed an abrupt interface, negligible interdiffusion of P and O, opening the way to excellent ITO contacts to epitaxial devices made from InP and possibly other materials.

Paper Details

Date Published: 24 April 1995
PDF: 5 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206876
Show Author Affiliations
Alain Azema, Univ. de Nice Sophia-Antipolis (France)
Corinne Coutal, Univ. de Nice Sophia-Antipolis (France)
Jean-Claude Roustan, Univ. de Nice Sophia-Antipolis (France)
Stephen Taylor, CRHEA (France)
Andre Leycuras, CRHEA (France)

Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

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