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Proceedings Paper

Electroluminescence of confined carriers in type II broken-gap p-GaInAsSb/p-InAs single heterojunction
Author(s): Maya P. Mikhailova; Georgy G. Zegrya; Konstantin D. Moiseev; Ivan N. Timchenko; Igor A. Andreev; Yury P. Yakovlev
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Paper Abstract

First observation of electroluminescence in type II broken-gap p-GaInAsSb/p-InAs single heterojunctions is reported. Intensive spontaneous emission was obtained under applied bias at T equals 77 - 300 K. Two narrow `resonant' emission bands were observed in the spectral range 3 - 5 micrometers at T equals 77 K with full width at half maximum about 1 - 2 kT. It was established that effect of unusual electroluminescence in isotype type II broken-gap p-p- heterostructure due to indirect (tunnel) radiative recombination of spatial separated 2D- electrons and holes localized in deep adjacent quantum wells at different sides of the interface. Novel tuneable mid-infrared light sources are proposed.

Paper Details

Date Published: 24 April 1995
PDF: 4 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206866
Show Author Affiliations
Maya P. Mikhailova, A.F. Ioffe Physical-Technical Institute (Russia)
Georgy G. Zegrya, A.F. Ioffe Physical-Technical Institute (Russia)
Konstantin D. Moiseev, A.F. Ioffe Physical-Technical Institute (Russia)
Ivan N. Timchenko, A.F. Ioffe Physical-Technical Institute (Russia)
Igor A. Andreev, A.F. Ioffe Physical-Technical Institute (Russia)
Yury P. Yakovlev, A.F. Ioffe Physical-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

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