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Proceedings Paper

Photoreflectance spectroscopy of metalorganic chemical vapor deposition (MOCVD)-grown GaAs and GaAs/GaAlAs structures
Author(s): Jan Misiewicz; Krzysztof Jezierski; P. Sitarck; P. Markiewicz; Ryszard Korbutowicz; Marek Panek; Beata Sciana; Marek J. Tlaczala
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Paper Abstract

Experimental set-up has been established by using high resolution monochromator as well as He-Ne and Ar multiline lasers. Epitaxial, undoped and doped (Si and Zn) GaAs and GaAlAs layers as well as heterostructures of GaAs/GaAlAs have been grown in atmospheric pressure vertical MOCVD system. Room temperature photoreflectance (PR) have been applied to characterize layers, heterostructures as well as the multiple quantum wells. The surface and interface related PR have been studied by means of Kramers-Kronig analysis. Decomposition of PR spectrum into the spectra connected with surface region and with the interface has been proposed. Modulus of the complex photoreflectance gives us the critical point energy, whereas the phase of this function can be used for a carrier concentration topography.

Paper Details

Date Published: 24 April 1995
PDF: 10 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206864
Show Author Affiliations
Jan Misiewicz, Technical Univ. of Wroclaw (Poland)
Krzysztof Jezierski, Technical Univ. of Wroclaw (Poland)
P. Sitarck, Technical Univ. of Wroclaw (Poland)
P. Markiewicz, Technical Univ. of Wroclaw (Poland)
Ryszard Korbutowicz, Technical Univ. of Wroclaw (Poland)
Marek Panek, Technical Univ. of Wroclaw (Poland)
Beata Sciana, Technical Univ. of Wroclaw (Poland)
Marek J. Tlaczala, Technical Univ. of Wroclaw (Poland)


Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

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