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Proceedings Paper

Use of scanning probe microscopies to study transport in semiconductor heterostructures
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Paper Abstract

The use of scanning probe microscopies--such as Scanning Tunneling Microscopy (STM) and Ballistic Electron Emission Microscopy (BEEM) to study carrier transport through semiconductor heterostructures--is reviewed. The ability of BEEM to probe buried structures below the surface can be exploited to study heterostructure band-offsets and resonant tunneling through quantum structures. It will be shown that BEEM can serve as a powerful probe of the spectroscopy of such structures. The implications of such studies for research on quantum dots and the characterization of new optoelectronic materials will be discussed.

Paper Details

Date Published: 24 April 1995
PDF: 10 pages
Proc. SPIE 2397, Optoelectronic Integrated Circuit Materials, Physics, and Devices, (24 April 1995); doi: 10.1117/12.206861
Show Author Affiliations
Venkatesh Narayanamurti, Univ. of California/Santa Barbara (United States)

Published in SPIE Proceedings Vol. 2397:
Optoelectronic Integrated Circuit Materials, Physics, and Devices
Manijeh Razeghi; Yoon-Soo Park; Gerald L. Witt, Editor(s)

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