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Proceedings Paper

Use of ILT-based mask optimization for local printability enhancement
Author(s): Alexander Tritchkov; Sergey Kobelkov; Sergei Rodin; Kyohei Sakajiri; Evgueni Egorov; Soung-Su Woo
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Paper Abstract

In this paper we study the trade-offs and benefits of using ILT-based SRAF placement/OPC over conventional SRAF placement/OPC for various front-end and back-end design configurations on a full chip. We explore the use models and benefits of using ILT-based Local Printability Enhancement (LPE) in an automated flow to eliminate hot spots that can be present on the full chip after conventional SRAF placement/OPC. We study the impact on process-window, performance, and mask manufacturability.

Paper Details

Date Published: 28 July 2014
PDF: 8 pages
Proc. SPIE 9256, Photomask and Next-Generation Lithography Mask Technology XXI, 92560X (28 July 2014); doi: 10.1117/12.2068493
Show Author Affiliations
Alexander Tritchkov, Mentor Graphics Corp. (United States)
Sergey Kobelkov, Mentor Graphics Corp. (United States)
Sergei Rodin, Mentor Graphics Corp. (United States)
Kyohei Sakajiri, Mentor Graphics Corp. (United States)
Evgueni Egorov, Mentor Graphics Corp. (United States)
Soung-Su Woo, Mentor Graphics Corp. (United States)

Published in SPIE Proceedings Vol. 9256:
Photomask and Next-Generation Lithography Mask Technology XXI
Kokoro Kato, Editor(s)

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