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Proceedings Paper

Phase defect detection signal analysis: dependence of defect size variation
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Paper Abstract

Influence of the size or volume of the phase defect embedded in the Extreme Ultraviolet (EUV) mask on wafer printability by scanning probe microscope (SPM) is well studied. However, only few experimental results on the measurement accuracy of the phase defect size have been reported. Therefore, in this study, measurement repeatability of the phase defect volume using SPM, and influence of the defect volume distribution on defect detection signal intensity using an at-wavelength dark-field defect inspection tool were examined. A programmed phase defect mask was prepared, and defect size measurement repeatability test was conducted using a SPM. After capturing the defect images, the defect volumes were then calculated. As a result, variation of measured volume due to the measurement repeatability was much smaller than that of the defect-to-defect variation. This result indicates that measuring of the volume of each phase defect is necessary in order to evaluate the defect detection yield using phase defect inspection tool and wafer printability. In addition, the phase defects were captured their images using an at-wavelength dark-field inspection tool and from which the defect detection signal intensities were calculated. Even though the defect signal intensity itself seemed to have variation, the defect volume can be roughly estimated from the defect signal intensity.

Paper Details

Date Published: 8 October 2014
PDF: 7 pages
Proc. SPIE 9235, Photomask Technology 2014, 92351H (8 October 2014); doi: 10.1117/12.2068370
Show Author Affiliations
Tsuyoshi Amano, EUVL Infrastructure Development Ctr., Inc. (Japan)
Hidehiro Watanabe, EUVL Infrastructure Development Ctr., Inc. (Japan)
Tsukasa Abe, Dai Nippon Printing Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 9235:
Photomask Technology 2014
Paul W. Ackmann; Naoya Hayashi, Editor(s)

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