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Proceedings Paper

Integration of picosecond GaAs photoconductive devices with silicon circuits for optical clocking and interconnects
Author(s): Jeffrey D. Morse; Raymond P. Mariella; Gregory Anderson; Robert W. Dutton
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Paper Abstract

GaAs layers have been grown on silicon subsirates by Molecular Beam Epitaxy (MBE), from which photoconductive circuit elements (PCE) have been fabricated. A fabrication procedure will be described which is fully compatible with standard siicdn IC processing technology. Results will be presented demonstrating the reliance of GaAs PCE performance on epitaxial growth conditions and subsequent processing steps. PCE response speeds ranging from <10 to 60 P5 have been observed.

Paper Details

Date Published: 1 August 1990
PDF: 5 pages
Proc. SPIE 1281, Optical Interconnections and Networks, (1 August 1990); doi: 10.1117/12.20683
Show Author Affiliations
Jeffrey D. Morse, Lawrence Livermore National Lab. (United States)
Raymond P. Mariella, Lawrence Livermore National Lab. (United States)
Gregory Anderson, Stanford Univ. (United States)
Robert W. Dutton, Stanford Univ. (United States)


Published in SPIE Proceedings Vol. 1281:
Optical Interconnections and Networks
Hartmut Bartelt, Editor(s)

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