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Proceedings Paper

Photoluminescence of some chalcogenide glasses doped with rare-earth ions
Author(s): Mihail Iovu; Elana Lupan; Jurii Zavadil; Peter Kostka; Zoya Ivanova; Angela Seddon; David Furniss
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Paper Abstract

The absorption and emission spectra of Ga-La-S:O doped with Pr3+, and Ga-Ge-As-S chalcogenide glasses doped with Pr3+, Dy3+, Nd3+, Sm3+ and Ho3+ were experimentally investigated at room temperature and at T=4 K. Photoluminescence spectra were measured at low temperature (T=4 K) at excitation by He-Ne (λ=632.8 nm line) and Ar ion (INNOVA 306, λ=514.5 nm line) lasers working in CW regime, in order to observe simultaneously the narrow 4f-4f emission from rare-earth ions and the broad band luminescence of the host glass. In the transmission spectra of rare-earth doped glasses differs from that of the base glass. The major feature in low-temperature of photoluminescence spectra (PL) is the presence of the broad band luminescence of the host glass and relatively sharp 4f-4f radiative transitions due to the presence of rare-earth (RE3+) ions, that gives the direct evidence of the energy transfer between the host glass and respective RE3+ dopants.

Paper Details

Date Published: 20 February 2015
PDF: 6 pages
Proc. SPIE 9258, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VII, 925805 (20 February 2015); doi: 10.1117/12.2068290
Show Author Affiliations
Mihail Iovu, Institute of Applied Physics (Moldova)
Elana Lupan, Institute of Applied Physics (Moldova)
Jurii Zavadil, Institute of Photonics and Electronics of the ASCR, v.v.i. (Czech Republic)
Peter Kostka, Institute of Rock Structure and Mechanics of the ASCR, v.v.i. (Czech Republic)
Zoya Ivanova, Institute of Solid State Physics (Bulgaria)
Angela Seddon, The Univ. of Nottingham (United Kingdom)
David Furniss, The Univ. of Nottingham (United Kingdom)


Published in SPIE Proceedings Vol. 9258:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies VII
Ionica Cristea; Marian Vladescu; Razvan Tamas, Editor(s)

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