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Proceedings Paper

Molecular beam epitaxy growth of high quality InAs/GaSb type-II superlattices for long wavelength infrared detection
Author(s): Fangfang Wang; Jianxin Chen; Zhicheng Xu; Yi Zhou; Qingqing Xu; Li He
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Paper Abstract

InAs/GaSb superlattices are excellent candidates for the third-generation long-wave infrared and very-long-wave infrared photodetectors due to their special energy structure and theoretical advantages. To realize their inherent potential, however, superlattice materials with low defect density and improved device characteristics must be demonstrated. Here we report on the demonstration of highperformance PBπN photodiodes based on type-II InAs/GaSb superlattices with full cut-off wavelength ~ 13.0 μm operating at 77 K. Samples with migration-enhanced epitaxy for interface layers were grown by molecular beam epitaxy on GaSb substrates and characterized by high-resolution X-ray diffraction and atomic force microscopy. The FWHM of the 1st-order X-ray diffraction satellite peak of the absorption layers was only 21.6". The average roughness from AFM on a 2×2 μm2 scan area was less than 0.15 nm. Optical and electrical measurements of the photodiodes revealed high uniformity of the type-II superlattice materials. Across the wafer, the detector structure showed a full cut-off wavelength of 13.0 μm at 77 K. The dark current density at -50 mV was 5.1×10-4 A/cm2 and the maximum resistance-area product (RmaxA) was 128.5 Ω cm2.

Paper Details

Date Published: 20 November 2014
PDF: 6 pages
Proc. SPIE 9300, International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications, 930008 (20 November 2014); doi: 10.1117/12.2068276
Show Author Affiliations
Fangfang Wang, Shanghai Institute of Technical Physics (China)
Jianxin Chen, Shanghai Institute of Technical Physics (China)
Zhicheng Xu, Shanghai Institute of Technical Physics (China)
Univ. of Chinese Academy of Sciences (China)
Yi Zhou, Shanghai Institute of Technical Physics (China)
Qingqing Xu, Shanghai Institute of Technical Physics (China)
Li He, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 9300:
International Symposium on Optoelectronic Technology and Application 2014: Infrared Technology and Applications
Mircea Guina; Haimei Gong; Zhichuan Niu; Jin Lu, Editor(s)

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