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Proceedings Paper

Interface absorption versus film absorption in HfO2 SiO2 thin-film pairs in the near-ultraviolet and the relation to pulsed-laser damage
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Paper Abstract

Near-ultraviolet absorption in hafnium oxide and silica oxide thin-film pairs in a configuration strongly departing from the regular quarter-wave–thickness approach has been studied with the goal of separating film and interfacial contributions to absorption and pulsed laser damage. For this purpose, we manufactured a model HfO2 SiO2 thin-film coating containing seven HfO2 layers separated by narrow SiO2 layers and a single-layer HfO2 film in one coating run. The two coatings were characterized by a one-wave total optical thickness for the HfO2 material and similar E-field peak intensity inside the film. Absorption in the electron-beam–deposited films was measured using photothermal heterodyne imaging. By comparing absorption for the seven-layer and single-layer films, one can estimate the partial HfO2 SiO2 interface contribution. Relevance of obtained data to the thin-film pulsed-laser damage was verified by conducting 351-nm, nanosecond-laser–damage measurements and damage-morphology characterization using atomic force microscopy.

Paper Details

Date Published: 31 October 2014
PDF: 7 pages
Proc. SPIE 9237, Laser-Induced Damage in Optical Materials: 2014, 92370Q (31 October 2014); doi: 10.1117/12.2068241
Show Author Affiliations
S. Papernov, Univ. of Rochester (United States)
A. A. Kozlov, Univ. of Rochester (United States)
J. B. Oliver, Univ. of Rochester (United States)

Published in SPIE Proceedings Vol. 9237:
Laser-Induced Damage in Optical Materials: 2014
Gregory J. Exarhos; Vitaly E. Gruzdev; Joseph A. Menapace; Detlev Ristau; MJ Soileau; Detlev Ristau, Editor(s)

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