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Proceedings Paper

Scanner arc illumination and impact on EUV photomasks and scanner imaging
Author(s): Renzo Capelli; Anthony Garetto; Krister Magnusson; Thomas Scherübl
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Paper Abstract

The combination of a reflective photomask with the non-telecentric illumination and arc shaped slit of the EUV scanner introduces what are known as shadowing effects. The compensation of these effects requires proper biasing of the photomask to generate the intended image on the wafer. Thus, the physical pattern on the mask ends up being noticeably different from the desired pattern to be written on the wafer. This difference has a strong dependence on both the illumination settings and the features to be printed. In this work, the impact of shadowing effects from line and space patterns with a nominal CD of 16nm at wafer was investigated with particular focus on the influence of pattern orientation and pitch, illumination pupil shape and fill (coherence) and absorber height. CD, best focus shift and contrast at best focus are utilized in detail in order to study the impact of the shadowing effects. All the simulation cases presented employ a complete scanner arc emulation, i.e. describe the impact of the azimuthal angle component of the illumination arc as in the NXE:3300 scanner and as it can be emulated by the AIMSTM EUV.

Paper Details

Date Published: 17 October 2014
PDF: 14 pages
Proc. SPIE 9231, 30th European Mask and Lithography Conference, 923109 (17 October 2014); doi: 10.1117/12.2067578
Show Author Affiliations
Renzo Capelli, Carl Zeiss SMS (Germany)
Anthony Garetto, Carl Zeiss SMS (Germany)
Krister Magnusson, Carl Zeiss SMS (Germany)
Thomas Scherübl, Carl Zeiss SMS (Germany)


Published in SPIE Proceedings Vol. 9231:
30th European Mask and Lithography Conference
Uwe F. W. Behringer, Editor(s)

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