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Proceedings Paper

MQW p-i-n heterostructure electro-optical characteristics in the region of allowed and "forbidden" transitions in quantum wells
Author(s): Polievet I. Perov; A. V. Chomich; L. A. Avdeeva; B. K. Medvedev; V. B. Mokerov
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Paper Abstract

The effect of electric fields on the optical properties of GaAs-A1GaAs ultiquantu well (HQW) structures are attracting much attention due to potential applications in high-speed modulation and switching of optical signals4 The existing technology of growing GaAs-A1GaAs MQW's allows to manufacture devices which have responce required for for implementation of neutral networks and associative meffiories.

Paper Details

Date Published: 1 August 1990
PDF: 3 pages
Proc. SPIE 1280, High Speed Phenomena in Photonic Materials and Optical Bistability, (1 August 1990); doi: 10.1117/12.20673
Show Author Affiliations
Polievet I. Perov, Institute of Radioengineering and Electronics (Russia)
A. V. Chomich, Institute of Radioengineering and Electronics (Russia)
L. A. Avdeeva, Institute of Radioengineering and Electronics (Russia)
B. K. Medvedev, Institute of Radioengineering and Electronics (Russia)
V. B. Mokerov, Institute of Radioengineering and Electronics (Russia)


Published in SPIE Proceedings Vol. 1280:
High Speed Phenomena in Photonic Materials and Optical Bistability
Dieter Jaeger, Editor(s)

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