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Proceedings Paper

Influence of band gap grading of intrinsic layer and annealing post on the optical and electrical performance of amorphous silicon germanium thin film solar cells
Author(s): Baojun Yan; Shulin Liu; Lei Zhao; Wenjing Wang; Yuzhen Yang
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Paper Abstract

Hydrogenated amorphous silicon germanium (a-SiGe:H) single junction pin sequence solar cells with different bandgap structure of intrinsic layer were prepared by radio frequency plasma enhanced chemical vapor deposition (RF-PECVD). Three kinds type of intrinsic layer using in this study were non-grading structure, V type grading and reverse V type grading. The effects of different intrinsic layer structure on solar cell performance were systematically studied. The results showed that the optimized structure of intrinsic layer was the reverse V type grading structure. And the performance of a-SiGe:H solar cell with reverse V type grading after annealing also were studied. The results revealed that the performance was improved after first annealing, but was deteriorate for further annealing. And, we have studied the dark I-V curves in order to contribute to a better understanding of the basis of solar cells.

Paper Details

Date Published: 2 September 2014
PDF: 6 pages
Proc. SPIE 9284, 7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronics Materials and Devices for Sensing and Imaging, 92840A (2 September 2014); doi: 10.1117/12.2067083
Show Author Affiliations
Baojun Yan, Institute of High Energy Physics (China)
Shulin Liu, Institute of High Energy Physics (China)
Lei Zhao, Institute of Electrical Engineering (China)
Wenjing Wang, Institute of Electrical Engineering (China)
Yuzhen Yang, Guangxi Univ. (China)


Published in SPIE Proceedings Vol. 9284:
7th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronics Materials and Devices for Sensing and Imaging
Yadong Jiang; Junsheng Yu; Bernard Kippelen, Editor(s)

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