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Proceedings Paper

Imaging impact of multilayer tuning in EUV masks, experimental validation
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Paper Abstract

This paper reports on the experimental validation of adapting the multilayer periodicity of an EUV mask to mitigate pattern shifts at wafer level. This EUV specific pattern shift will eventually contribute to overlay budgets which continue to tighten with decreasing technology node. A good understanding of its manipulators, i.e., mask 3D effects, is paramount. By means of mask diffractometry and scanner exposures at numerical aperture of 0.33 the mask-induced pattern shift at wafer level is verified. These measurements are then correlated to rigorous simulations using a calibrated EUV mask stack model to accurately predict the imaging impact of multilayer tuning in EUV masks. A comprehensive interpretation of the mask 3D impact on pattern shift at wafer level will be presented based on simulated diffraction pupils supported by experimental verification at both mask and wafer level.

Paper Details

Date Published: 15 October 2014
PDF: 13 pages
Proc. SPIE 9235, Photomask Technology 2014, 92350J (15 October 2014); doi: 10.1117/12.2066222
Show Author Affiliations
Vicky Philipsen, IMEC (Belgium)
Eric Hendrickx, IMEC (Belgium)
Erik Verduijn, GLOBALFOUNDRIES Inc. (United States)
Sudhar Raghunathan, GLOBALFOUNDRIES Inc. (United States)
Obert Wood, GLOBALFOUNDRIES Inc. (United States)
Victor Soltwisch, Physikalisch-Technische Bundesanstalt (Germany)
Frank Scholze, Physikalisch-Technische Bundesanstalt (Germany)
Natalia Davydova, ASML Netherlands B.V. (Netherlands Antilles)
Pawitter Mangat, GLOBALFOUNDRIES Inc. (United States)


Published in SPIE Proceedings Vol. 9235:
Photomask Technology 2014
Paul W. Ackmann; Naoya Hayashi, Editor(s)

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