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Proceedings Paper

Internal redistribution of the electric field and optical nonlinearity in p-i-n heterostructure by electroabsorbtion of light
Author(s): Dmitry M. Boutoussov; G. G. Gotsadze; Boris S. Ryvkin; Robert A. Suris
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Paper Abstract

The new type of seif-electrooptic--effect--device is presented. Optical nonlinearity and bistability due to the internal electric field redistribution in nonuniform i-layer of double GaAs/A1GaAs PIN heterostructure are achieved.

Paper Details

Date Published: 1 August 1990
PDF: 7 pages
Proc. SPIE 1280, High Speed Phenomena in Photonic Materials and Optical Bistability, (1 August 1990); doi: 10.1117/12.20662
Show Author Affiliations
Dmitry M. Boutoussov, A.F. Ioffe Physical-Technical Institute (Russia)
G. G. Gotsadze, A.F. Ioffe Physical-Technical Institute (Russia)
Boris S. Ryvkin, A.F. Ioffe Physical-Technical Institute (Russia)
Robert A. Suris, A.F. Ioffe Physical-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 1280:
High Speed Phenomena in Photonic Materials and Optical Bistability
Dieter Jaeger, Editor(s)

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