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Proceedings Paper

Short feedback loop for OPC model based on wafer level CD
Author(s): Guoxiang Ning; Thomas Thaler; Kristian Schulz; Peter Philipp; Ute Buttgereit; Paul Ackmann; Lloyd C. Litt; Chin Teong Lim
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Paper Abstract

A calibrated Optical Proximity Correction Model (OPC) allows the accurate prediction of wafer printing results based on the geometrically defined layout of features. Therefore the OPC Model takes physical parameter of the mask, optical parameter of the printing system and chemical parameter of the resist into account. In order to find a good correlation between OPC simulated data and real wafer prints, the mentioned parameter needs to be calibrated. In the past, this calibration was done based only on the wafer CD SEM measurements. To speed up the calibration process, this paper investigates the possibility to use the aerial image measured by a wafer level critical dimension measurement tool (WLCD) to shorten the feedback loop and to reduce the amount of wafer prints needed for calibration.

Paper Details

Date Published: 29 October 2014
PDF: 8 pages
Proc. SPIE 9235, Photomask Technology 2014, 92351U (29 October 2014); doi: 10.1117/12.2066169
Show Author Affiliations
Guoxiang Ning, GLOBALFOUNDRIES Inc. (United States)
Thomas Thaler, Carl Zeiss SMS GmbH (Germany)
Kristian Schulz, Carl Zeiss SMS GmbH (Germany)
Peter Philipp, Advanced Mask Technology Ctr. GmbH & Co. KG (Germany)
Ute Buttgereit, Carl Zeiss SMS GmbH (Germany)
Paul Ackmann, GLOBALFOUNDRIES Inc. (United States)
Lloyd C. Litt, GLOBALFOUNDRIES Inc. (United States)
Chin Teong Lim, GLOBALFOUNDRIES Inc. (United States)


Published in SPIE Proceedings Vol. 9235:
Photomask Technology 2014
Paul W. Ackmann; Naoya Hayashi, Editor(s)

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