Share Email Print

Proceedings Paper

The defect printability study for 28nm mode mask
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

For the volume mask production of 28nm node and beyond, the defect disposition is an important factor for mask process, due to the scaling feature sizes and advanced resolution enhancement technologies. In this paper, the series of specifications for different mask patterns have been established from the defect printability study through the behaviors of programmed defects with varies types and sizes on mask, AIMS and wafer. The defect disposition to qualify the mask defects and verify the defect repair proceeds on the basis of the defect printability study. It is found that the defect specification is an effective and industrialized approach for mask production.

Paper Details

Date Published: 8 October 2014
PDF: 11 pages
Proc. SPIE 9235, Photomask Technology 2014, 923523 (8 October 2014); doi: 10.1117/12.2066099
Show Author Affiliations
Catherine Ren, Semiconductor Manufacturing International Corp. (China)
Eric Guo, Semiconductor Manufacturing International Corp. (China)
Irene Shi, Semiconductor Manufacturing International Corp. (China)
Eric Tian, Semiconductor Manufacturing International Corp. (China)

Published in SPIE Proceedings Vol. 9235:
Photomask Technology 2014
Paul W. Ackmann; Naoya Hayashi, Editor(s)

© SPIE. Terms of Use
Back to Top