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Proceedings Paper

High-throughput parallel SPM for metrology, defect, and mask inspection
Author(s): H. Sadeghian; R. W. Herfst; T. C. van den Dool; W. E. Crowcombe; J. Winters; G. F. I. J. Kramer
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Paper Abstract

Scanning probe microscopy (SPM) is a promising candidate for accurate assessment of metrology and defects on wafers and masks, however it has traditionally been too slow for high-throughput applications, although recent developments have significantly pushed the speed of SPM [1,2]. In this paper we present new results obtained with our previously presented high-throughput parallel SPM system [3,4] that showcase two key advances that are required for a successful deployment of SPM in high-throughput metrology, defect and mask inspection. The first is a very fast (up to 40 lines/s) image acquisition and a comparison of the image quality as function of speed. Secondly, a fast approach method: measurements of the scan-head approaching the sample from 0.2 and 1.0 mm distance in under 1.4 and 6 seconds respectively.

Paper Details

Date Published: 17 October 2014
PDF: 6 pages
Proc. SPIE 9231, 30th European Mask and Lithography Conference, 92310B (17 October 2014); doi: 10.1117/12.2065939
Show Author Affiliations
H. Sadeghian, TNO (Netherlands)
Delft Univ. of Technology (Netherlands)
R. W. Herfst, TNO (Netherlands)
T. C. van den Dool, TNO (Netherlands)
W. E. Crowcombe, TNO (Netherlands)
J. Winters, TNO (Netherlands)
G. F. I. J. Kramer, TNO (Netherlands)

Published in SPIE Proceedings Vol. 9231:
30th European Mask and Lithography Conference
Uwe F. W. Behringer, Editor(s)

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