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Proceedings Paper

Study of heating effect in multi-beam mask writing
Author(s): Jongsu Kim; Jihoon Kang; Inhwan Noh; Sookhyun Lee; Soeun Shin; Sungil Lee; Hyunchung Ha; Hojune Lee; Jin Choi; Sanghee Lee; Inkyun Shin; Shuichi Tamamushi; Chan-Uk Jeon
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Paper Abstract

Recently, Multi-Beam Mask Writer (MBMW) scheme is newly considered for next generation writing scheme. As the MBMW writing uses many multi-array bundle beams with small spot size, the fast writing and complex pattering is possible conceptually. The target dose level of MBMW is high around 100μC/cm2 and the target of total writing time is within 10 hours for next generation layout with complex and small node pattern. The risks of high dose writing are rising of blank temperature, chemical reaction with photo-resist and charging effects in blank. In addition, the fast writing can cause the rising of temperature in blank. The heating effect can be divided into local and global terms, and each effect of critical dimension (CD) and registration was analyzed by heating effect. In case of MBMW, the global heating is more critical than local heating. Therefore, we need to study about the global heating effect which can affect global registration in MBMW. In this paper, we study about the global heat distribution on mask blank in certain MBMW writing condition, and the directional deformation of blank which can affect global registration was analyzed by using Finite Element Method (FEM). We approach with two kinds of modified heat model and the FEM model was verified with analytical calculation. The temperature variation and deformation distribution were achieved with transient method with the writing conditions, in case of 100μC/cm2 of total dose, 50kV of acceleration voltage, 100% of chip density and 10 hour of total writing time. Therefore, we can consider the writing conditions according to mask specification in MBMW scheme.

Paper Details

Date Published: 16 September 2014
PDF: 8 pages
Proc. SPIE 9235, Photomask Technology 2014, 92350Y (16 September 2014); doi: 10.1117/12.2065930
Show Author Affiliations
Jongsu Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jihoon Kang, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Inhwan Noh, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Sookhyun Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Soeun Shin, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Sungil Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hyunchung Ha, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Hojune Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Jin Choi, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Sanghee Lee, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Inkyun Shin, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Shuichi Tamamushi, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Chan-Uk Jeon, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)


Published in SPIE Proceedings Vol. 9235:
Photomask Technology 2014
Paul W. Ackmann; Naoya Hayashi, Editor(s)

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