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Proceedings Paper

A 3000W 808nm QCW G-stack semiconductor laser array
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Paper Abstract

With the improvement of output power, efficiency and reliability, high power semiconductor lasers have been applied in more and more fields. In this paper, a conduction-cooled, high peak output power semiconductor laser array was studied and developed. The structure and operation parameters of G-Stack semiconductor laser array were designed and optimized using finite element method (FEM). A Quasi-continuous-wave (QCW) conduction-cooled G-Stack semiconductor laser array with a narrow spectrum width was fabricated successfully.

Paper Details

Date Published: 3 February 2015
PDF: 7 pages
Proc. SPIE 9255, XX International Symposium on High-Power Laser Systems and Applications 2014, 92550W (3 February 2015); doi: 10.1117/12.2065663
Show Author Affiliations
Pu Zhang, Xi'an Institute of Optics and Precision Mechanics (China)
Jingwei Wang, Xi'an Focuslight Technologies Co., Ltd. (China)
Dong Hou, Xi'an Focuslight Technologies Co., Ltd. (China)
Zhenfu Wang, Xi'an Institute of Optics and Precision Mechanics (China)
Lingling Xiong, Xi'an Institute of Optics and Precision Mechanics (China)
Hui Liu, Xi'an Institute of Optics and Precision Mechanics (China)
Zhiqiang Nie, Xi'an Institute of Optics and Precision Mechanics (China)
Xingsheng Liu, Xi'an Institute of Optics and Precision Mechanics (China)
Xi'an Focuslight Technologies Co., Ltd. (China)


Published in SPIE Proceedings Vol. 9255:
XX International Symposium on High-Power Laser Systems and Applications 2014
Chun Tang; Shu Chen; Xiaolin Tang, Editor(s)

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