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Proceedings Paper

Lifetime of high-power GaAs photoconductive semiconductor switch triggered by laser of different power density
Author(s): Yi Liu; Wei Wang; Yi Shen; Jinshui Shi; Linwen Zhang; Liansheng Xia
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Paper Abstract

Conduction modes of GaAs photoconductive semiconductor switch (PCSS) and their conditions are expounded. Laser diode and high-power picosecond Nd:YAG lasers are used as triggers for nonlinear mode and quasi-linear mode respectively in high-power conduction experiment. GaAs PCSS`s failure mechanisms and factors influencing lifetime in both modes are analyzed. It is found that the power density of laser at trigger time determines in which mode GaAs PCSS operates. Low-power laser triggers a nonlinear mode conduction in which GaAs PCSS`s lifetime is only 103, while high-power laser triggers a quasi-linear mode conduction in which GaAs PCSS`s lifetime is up to 105. According to the findings, the compact high-power pulsed power system based on mass of GaAs PCSSs demands for miniature high-power laser generators.

Paper Details

Date Published: 3 February 2015
PDF: 5 pages
Proc. SPIE 9255, XX International Symposium on High-Power Laser Systems and Applications 2014, 92554G (3 February 2015); doi: 10.1117/12.2065390
Show Author Affiliations
Yi Liu, China Academy of Engineering Physics (China)
Wei Wang, China Academy of Engineering Physics (China)
Yi Shen, China Academy of Engineering Physics (China)
Jinshui Shi, China Academy of Engineering Physics (China)
Linwen Zhang, China Academy of Engineering Physics (China)
Liansheng Xia, China Academy of Engineering Physics (China)


Published in SPIE Proceedings Vol. 9255:
XX International Symposium on High-Power Laser Systems and Applications 2014
Chun Tang; Shu Chen; Xiaolin Tang, Editor(s)

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