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Proceedings Paper

256 x 256 CMOS active pixel image sensor
Author(s): Sayed I. Eid; Alex G. Dickinson; Dave A. Inglis; Bryan D. Ackland; Eric R. Fossum
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Paper Abstract

A 256 X 256 CMOS photo-gate active pixel image sensor is presented. The image sensor uses four MOS transistors within each pixel to buffer the photo-signal, enhance sensitivity, and suppress noise. The pixel size is 20 micrometers X 20 micrometers and was implemented in a standard digital 0.9 micrometers single-polysilicon, double-metal, n-well CMOS process; leading to 25% fill-factor. Row and column decoders and counters are monolithically integrated as well as per column analog signal correlated double-sampling (CDS) processors, yielding a total chip size of approximately 4.5 mm X 5.0 mm. The image sensor features random accessibility and can be employed for electronic panning applications. It is powered from a single 5.0 V source. At 5.0 V power supply, the video signal saturation level is approximately 1,200 mV with rms read-out noise level of approximately 300 (mu) V, yielding a dynamic range of 72 dB (12 bits). The read-out sensitivity is approximately 6.75 (mu) V per electron, indicating a read-out node capacitance of approximately 24 fF which is consistent with the extracted value. The measured dark current (at room temperature) is approximately 160 mV/s, equivalent to 3.3 nA/cm2. The raw fixed pattern noise (exhibited as column-wise streaks) is approximately 20 mV (peak-to-peak) or approximately 1.67% of saturation level. At 15 frames per second, the power dissipation is approximately 75 mW.

Paper Details

Date Published: 10 April 1995
PDF: 11 pages
Proc. SPIE 2415, Charge-Coupled Devices and Solid State Optical Sensors V, (10 April 1995); doi: 10.1117/12.206522
Show Author Affiliations
Sayed I. Eid, AT&T Bell Labs. (United States)
Alex G. Dickinson, AT&T Bell Labs. (United States)
Dave A. Inglis, AT&T Bell Labs. (United States)
Bryan D. Ackland, AT&T Bell Labs. (United States)
Eric R. Fossum, Jet Propulsion Lab. (United States)


Published in SPIE Proceedings Vol. 2415:
Charge-Coupled Devices and Solid State Optical Sensors V
Morley M. Blouke, Editor(s)

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