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Proceedings Paper

Radiation-hardened backside-illuminated 512 x 512 charge-coupled device
Author(s): Philip A. Bates; Peter A. Levine; Donald J. Sauer; Fu-Lung Hsueh; Frank V. Shallcross; Ronald K. Smeltzer; Grazyna M. Meray; Gordon Charles Taylor; John R. Tower
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Paper Abstract

A four-port 512 X 512 charge coupled device (CCD) imager hardened against proton displacement damage and total dose degradation has been fabricated and tested. The device is based upon an established thinned, backside illuminated, triple polysilicon, buried channel CCD process technology. The technology includes buried blooming drains. A three step approach has been taken to hardening the device. The first phase addressed hardening against proton displacement damage. The second phase addressed hardening against both proton displacement damage and total dose degradation. The third phase addresses final optimization of the design. Test results from the first and second phase efforts are presented. Plans for the third phase are discussed.

Paper Details

Date Published: 10 April 1995
PDF: 15 pages
Proc. SPIE 2415, Charge-Coupled Devices and Solid State Optical Sensors V, (10 April 1995); doi: 10.1117/12.206514
Show Author Affiliations
Philip A. Bates, Rockwell International Corp. (United States)
Peter A. Levine, David Sarnoff Research Ctr. (United States)
Donald J. Sauer, David Sarnoff Research Ctr. (United States)
Fu-Lung Hsueh, David Sarnoff Research Ctr. (United States)
Frank V. Shallcross, David Sarnoff Research Ctr. (United States)
Ronald K. Smeltzer, David Sarnoff Research Ctr. (United States)
Grazyna M. Meray, David Sarnoff Research Ctr. (United States)
Gordon Charles Taylor, David Sarnoff Research Ctr. (United States)
John R. Tower, David Sarnoff Research Ctr. (United States)


Published in SPIE Proceedings Vol. 2415:
Charge-Coupled Devices and Solid State Optical Sensors V
Morley M. Blouke, Editor(s)

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