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Proceedings Paper

Femtosecond optical gating in GaSe
Author(s): C. Hirlimann; J. F. Morhange
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Paper Abstract

GaSe is a Ill-VI semiconductor, which exciton at 2 eV is observable at room temperature. In the experiments reported herein, a 15 im thick sample was excited by a 2 eV, 150 fs, pump pulse and the transmission was measured with a delayed "white light" probe pulse. At early times (t < 100 fs) the exciton undergoes a fast shift towards high energy which has been interpreted in terms of optical Stark effect. Because of the resonant excitation, the optical Stark shift of the exciton depends on the electromagnetic field amplitude rather than on the field intensity, as in the non-resonant case. Despite this less favourable situation, excitonic shifts of 10 meV are observed for the highest pump intensities (of the order of 16 GW/cm2). Taking advantage of these large shifts, we demonstrate the realization, at the exciton energy, of an optical gate having a rise time of 150 fs, associated with an "off-on" transmission ratio of 2.

Paper Details

Date Published: 1 August 1990
PDF: 8 pages
Proc. SPIE 1280, High Speed Phenomena in Photonic Materials and Optical Bistability, (1 August 1990); doi: 10.1117/12.20651
Show Author Affiliations
C. Hirlimann, Univ. Pierre et Marie Curie (France)
J. F. Morhange, Univ. Pierre et Marie Curie (France)


Published in SPIE Proceedings Vol. 1280:
High Speed Phenomena in Photonic Materials and Optical Bistability
Dieter Jaeger, Editor(s)

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