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Proceedings Paper

Electric field dependence of optical properties of a double quantum well: experiment and applications
Author(s): Domenico Campi; C. Cacciatore; Claudio Coriasso; C. Villavecchia; Claude L. Alibert
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Paper Abstract

In the present work, we report the systematic observation of the optical blue shift induced by electric field in a GaAs/GaAIAs double-well system as far as 18 meV at room temperature. To this end, a detailed electroreflectance study of a GaAs-Alo.3 Gao.7 As double quantum well structure was carried out at room temperature. This effect occurs at moderate values ofthe applied field. In addition, a computer modeling of the electric field dependent optical properties is presented, which is based upon a variational calculation, in the frame of the effective mass approximation. The calculated spectra agree with the expefimental results. The model was used to engineer a coupled QW structure, which optimises the achievable modulation depth, due to application of an electric field.

Paper Details

Date Published: 1 August 1990
PDF: 8 pages
Proc. SPIE 1280, High Speed Phenomena in Photonic Materials and Optical Bistability, (1 August 1990); doi: 10.1117/12.20650
Show Author Affiliations
Domenico Campi, CSELT (Italy)
C. Cacciatore, CSELT (Italy)
Claudio Coriasso, CSELT (Italy)
C. Villavecchia, CSELT (Italy)
Claude L. Alibert, Univ. des Sciences et Techniques du Languedoc (France)

Published in SPIE Proceedings Vol. 1280:
High Speed Phenomena in Photonic Materials and Optical Bistability
Dieter Jaeger, Editor(s)

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