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Proceedings Paper

Spin injection and spin-orbit coupling in low-dimensional semiconductor nanostructures
Author(s): Sebastian Heedt; Isabel Wehrmann; Thomas Gerster; Paul Wenk; Stefan Kettemann; Kamil Sladek; Hilde Hardtdegen; Andreas Bringer; Jürgen Schubert; Natalia Demarina; Detlev Grützmacher; Thomas Schäpers
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Paper Abstract

Due to their strong spin-orbit coupling III-V semiconductor nanowires are excellent candidates for electrical spin manipulation. Therefore, a major goal is to tailor spin-orbit coupling in these devices. Direct electrical spin injection into quasi one-dimensional nanowires is demonstrated. Furthermore, the weak antilocalization effect was investigated in InAs nanowires. The quantum corrections to the conductivity are interpreted by developing a quasi-one-dimensional diffusive model. It turns out that by means of doping and electric gating the spin-lifetimes can be tuned significantly. By creating few-electron quantum dots inside these devices the impact of the confinement on the spin relaxation properties is investigated.

Paper Details

Date Published: 28 August 2014
PDF: 7 pages
Proc. SPIE 9167, Spintronics VII, 916723 (28 August 2014); doi: 10.1117/12.2064867
Show Author Affiliations
Sebastian Heedt, Forschungszentrum Jülich GmbH (Germany)
Isabel Wehrmann, Forschungszentrum Jülich GmbH (Germany)
Thomas Gerster, Forschungszentrum Jülich GmbH (Germany)
Paul Wenk, Univ. Regensburg (Germany)
Stefan Kettemann, Jacobs Univ. Bremen (Germany)
Kamil Sladek, Forschungszentrum Jülich GmbH (Germany)
Hilde Hardtdegen, Forschungszentrum Jülich GmbH (Germany)
Andreas Bringer, Forschungszentrum Jülich GmbH (Germany)
Jürgen Schubert, Forschungszentrum Jülich GmbH (Germany)
Natalia Demarina, Forschungszentrum Jülich GmbH (Germany)
Detlev Grützmacher, Forschungszentrum Jülich GmbH (Germany)
Thomas Schäpers, Forschungszentrum Jülich GmbH (Germany)

Published in SPIE Proceedings Vol. 9167:
Spintronics VII
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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