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Proceedings Paper

Thermal and flicker noise improvement in short-channel CMOS detectors
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Paper Abstract

Integrated circuit (IC) technology has emerged as a suitable platform for infrared (IR) detector development. This technology is however susceptible to on-chip intrinsic noise. By using double-gate MOSFETs for detectors in the near-IR band, noise performance in the readout circuitry is improved, thereby enhancing the overall performance of these detectors. A 1 dB reduction in low-frequency noise is achieved, which is verified through simulations. It is shown that by using short-channel devices that noise improvement is furthermore obtained due to reduction in threshold voltage variation. The double-gate concept is applied in simulation to the three-transistor pixel topology and can also be implemented in other detector topologies such as the four-transistor pixel topology, since readout noise is not limited to specific IR detector topologies. The overall performance of near-IR detectors and the fill factor are significantly improved.

Paper Details

Date Published: 23 June 2014
PDF: 6 pages
Proc. SPIE 9257, Sensors, MEMS and Electro-Optical Systems, 92570Q (23 June 2014); doi: 10.1117/12.2064735
Show Author Affiliations
Johan Venter, Univ. of Pretoria (South Africa)
Saurabh Sinha, Univ. of Pretoria (South Africa)
Univ. of Johannesburg (South Africa)


Published in SPIE Proceedings Vol. 9257:
Sensors, MEMS and Electro-Optical Systems
Monuko du Plessis, Editor(s)

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