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Proceedings Paper

Laser doping of germanium for photodetector applications
Author(s): Keye Sun; Yiliang Bao; Mool C. Gupta
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Paper Abstract

A method of doping germanium using 1064 nm pulsed fiber laser was demonstrated. The secondary ion mass spectrometry showed a p-n junction of 800 nm deep with a peak phosphorus concentration of 2×1019 cm-3. Germanium photodiodes were fabricated on the laser-doped p-n junctions. Low bulk and surface leakage current values were obtained which were comparable to diodes fabricated by rapid thermal diffusion. Laser doping allows low thermal budget, minimization of surface desorption and selective doping without requiring photolithography. Laser doping was shown to be an effective method for fabrication of electronic and optoelectronic devices.

Paper Details

Date Published: 8 October 2014
PDF: 7 pages
Proc. SPIE 9180, Laser Processing and Fabrication for Solar, Displays, and Optoelectronic Devices III, 918008 (8 October 2014); doi: 10.1117/12.2064283
Show Author Affiliations
Keye Sun, Univ. of Virginia (United States)
Yiliang Bao, Univ. of Virginia (United States)
Mool C. Gupta, Univ. of Virginia (United States)


Published in SPIE Proceedings Vol. 9180:
Laser Processing and Fabrication for Solar, Displays, and Optoelectronic Devices III
Edward W. Reutzel, Editor(s)

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