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Proceedings Paper

Effect of defects on III-V MWIR nBn detector performance
Author(s): G. R. Savich; D. E. Sidor; X. Du; C. P. Morath; V. M. Cowan; G. W. Wicks
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Paper Abstract

Under elevated defect concentrations, MWIR, III-V nBn detectors exhibit diffusion limited performance with elevated dark current densities. The resulting diffusion current is limited by the generation of carriers through defect states in the neutral n-type absorber and a dark current dependence on the defect density described by one of two limits, a short absorber or long absorber limit. This characteristic contrasts that exhibited by defect limited, conventional pn junction based photodiodes which exhibit performance limited by Shockley-Read-Hall generation in the depletion layer rather than diffusion based processes.

Paper Details

Date Published: 17 September 2014
PDF: 6 pages
Proc. SPIE 9226, Nanophotonics and Macrophotonics for Space Environments VIII, 92260R (17 September 2014); doi: 10.1117/12.2064229
Show Author Affiliations
G. R. Savich, Univ. of Rochester (United States)
D. E. Sidor, Univ. of Rochester (United States)
X. Du, Univ. of Rochester (United States)
C. P. Morath, Air Force Research Lab. (United States)
V. M. Cowan, Air Force Research Lab. (United States)
G. W. Wicks, Univ. of Rochester (United States)


Published in SPIE Proceedings Vol. 9226:
Nanophotonics and Macrophotonics for Space Environments VIII
Edward W. Taylor; David A. Cardimona, Editor(s)

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