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Proceedings Paper

Relationship between the one-electron mechanisms for the intensity dependence of the refractive index of a semiconductor
Author(s): M. G. Burt
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Paper Abstract

The relationship between the three main one electron mechanisms that lead to an intensity dependence of the refractive index of a semiconductor namely the band filling effect, virtual interband transitions and the motion of free carriers in a nonparabolic band, is investigated theoretically. The semiconductor is modelled as an ensemble of independent two level electron systems and its nonlinear response to a light pulse is evaluated algebraically. In particular, it is shown (i) how the dependence of the dephasing time on optical frequency allows a smooth transition from the band filling regime to the virtual transitions regime and (ii) how the nonlinear motion of free carriers in a nonparabolic band is related to the nonresonant optical Stark effect.

Paper Details

Date Published: 1 August 1990
PDF: 4 pages
Proc. SPIE 1280, High Speed Phenomena in Photonic Materials and Optical Bistability, (1 August 1990); doi: 10.1117/12.20641
Show Author Affiliations
M. G. Burt, British Telecom Research Labs. (United Kingdom)


Published in SPIE Proceedings Vol. 1280:
High Speed Phenomena in Photonic Materials and Optical Bistability
Dieter Jaeger, Editor(s)

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