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Proceedings Paper

Optical orientation of electron spins in GaAs L-valleys
Author(s): Andrea Balocchi; Philippe Barate; Tiantian Zhang; Thierry Amand; Pierre Renucci; Hélène Carrère; Bernhard Urbaszek; Xavier Marie
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Paper Abstract

We report on optical orientation experiments in GaAs epilayers with excitation energies in the 3 eV region, leading the photo-generation of spin-polarized electrons in the satellite L valley. From both continuous-wave and time resolved measurements we show that a significant fraction of the electron spin memory can be conserved when the electron is scattered from the L to the Γ valley following an energy relaxation of several hundreds of meV. A typical L-valley electron spin relaxation time of 200 fs is deduced, in agreement with theoretical calculations.

Paper Details

Date Published: 28 August 2014
PDF: 6 pages
Proc. SPIE 9167, Spintronics VII, 91670A (28 August 2014); doi: 10.1117/12.2063921
Show Author Affiliations
Andrea Balocchi, Institut National des Sciences Appliquées de Toulouse, CNRS, Univ. de Toulouse (France)
Philippe Barate, Institut National des Sciences Appliquées de Toulouse, CNRS, Univ. de Toulouse (France)
Tiantian Zhang, Institut National des Sciences Appliquées de Toulouse, CNRS, Univ. de Toulouse (France)
Thierry Amand, Institut National des Sciences Appliquées de Toulouse, CNRS, Univ. de Toulouse (France)
Pierre Renucci, Institut National des Sciences Appliquées de Toulouse, CNRS, Univ. de Toulouse (France)
Hélène Carrère, Institut National des Sciences Appliquées de Toulouse, CNRS, Univ. de Toulouse (France)
Bernhard Urbaszek, Institut National des Sciences Appliquées de Toulouse, CNRS, Univ. de Toulouse (France)
Xavier Marie, Institut National des Sciences Appliquées de Toulouse, CNRS, Univ. de Toulouse (France)


Published in SPIE Proceedings Vol. 9167:
Spintronics VII
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi, Editor(s)

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