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Proceedings Paper

Nitride layer formation by multipulse excimer laser irradiation of solid samples
Author(s): Emilia D'Anna; Gilberto Leggieri; Armando Luches; Maurizio Martino; Antonio Luigi Perrone; A. V. Drigo; Joseph Zemek; Ion N. Mihailescu
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Paper Abstract

We report a study of the formation of nitride surface layers on semiconductor (Si) and metal (Ti) samples by multipuise (up to 2500) XeC1 excimer laser (A=308 nm) irradiation in N2 and NH atmosphere. After irradiation the samples were examined by optical and electron microscopy (SEM) . and then analyzed by Rutherford backscattering spectroscopy (RBS) , nuclear reaction analysis (NRA) , Auger and X-ray photoelectron spectroscopy (XPS) to positively identify the formed cornpounds. The electrical characteristics of the laser synthesized nitride layers were also measured. The amount of nitride has been observed to depend on the number of subsequent laser pulses and on the nature of the ambient gas.

Paper Details

Date Published: 1 August 1990
PDF: 13 pages
Proc. SPIE 1279, Laser-Assisted Processing II, (1 August 1990); doi: 10.1117/12.20634
Show Author Affiliations
Emilia D'Anna, Univ. di Lecce (Italy)
Gilberto Leggieri, Univ. di Lecce (Italy)
Armando Luches, Univ. di Lecce (Italy)
Maurizio Martino, Univ. di Lecce (Italy)
Antonio Luigi Perrone, Univ. di Lecce (Italy)
A. V. Drigo, Univ. di Lecce (Italy)
Joseph Zemek, Institute of Physics (Czech Republic)
Ion N. Mihailescu, Central Institute of Physics (Romania)


Published in SPIE Proceedings Vol. 1279:
Laser-Assisted Processing II
Lucien Diego Laude, Editor(s)

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