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Proceedings Paper

Selectively varying the number of active quantum wells in integrated devices using only one growth step
Author(s): Carl E. Norman; A. R. Pratt; M. R. Fahy; Robin L. Williams; A. Marinopoulou; F. Chatenoud
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Paper Abstract

The phenomenon of indium migration off the sidewalls of features on patterned GaAs substrates during MBE growth has been studied. The level of migration depends strongly on the arsenic flux and the growth temperature. Modulating the arsenic flux during the growth of multilayer structures allows the number of active quantum wells to vary from one region of a device to another.

Paper Details

Date Published: 10 April 1995
PDF: 10 pages
Proc. SPIE 2398, Circular-Grating Light-Emitting Sources, (10 April 1995); doi: 10.1117/12.206336
Show Author Affiliations
Carl E. Norman, Imperial College of Science, Technology and Medicine (United Kingdom)
A. R. Pratt, Imperial College of Science, Technology and Medicine (United Kingdom)
M. R. Fahy, Imperial College of Science, Technology and Medicine (United Kingdom)
Robin L. Williams, Imperial College of Science, Technology and Medicine (United Kingdom)
A. Marinopoulou, Imperial College of Science, Technology and Medicine (United Kingdom)
F. Chatenoud, National Research Council Canada (Canada)


Published in SPIE Proceedings Vol. 2398:
Circular-Grating Light-Emitting Sources
S. Iraj Najafi; Mahmoud Fallahi; Nasser Peyghambarian, Editor(s)

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