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Proceedings Paper

Ion-selective electrolyte-gated field-effect transistors: prerequisites for proper functioning
Author(s): Johannes Kofler; Kerstin Schmoltner; Emil J. W. List-Kratochvil
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Paper Abstract

Electrolyte-gated organic field-effect transistors (EGOFETs) used as transducers and amplifiers in potentiometric sensors have recently attracted a significant amount of scientific interest. For that reason, the fundamental prerequisites to achieve a proper potentiometric signal amplification and transduction are examined. First, polarizable as well as non-polarizable semiconductor- and gate-electrolyte- interface combinations are investigated by normal pulse voltammetry. The results of these measurements are correlated with the corresponding transistor characteristics, clarifying the functional principle of EGOFETs and the requirements for high signal amplification. In addition to a good electrical performance, the EGOFET-transducers should also be compatible with the targeted sensing application. Accordingly, the influence of different gate materials and electrolytes on the sensing abilities, are discussed. Even though all physical requirements are met, EGOFETs typically exhibit irreversible degradation, if the gate potential exceeds a certain level. For that reason, EGOFETs have to be operated using a constant source-drain operation mode which is presented by means of an H+ (pH) sensitive ion-sensor.

Paper Details

Date Published: 7 October 2014
PDF: 12 pages
Proc. SPIE 9185, Organic Field-Effect Transistors XIII; and Organic Semiconductors in Sensors and Bioelectronics VII, 91851U (7 October 2014); doi: 10.1117/12.2063121
Show Author Affiliations
Johannes Kofler, NanoTecCenter Weiz Forschungsgesellschaft mbH (Austria)
Kerstin Schmoltner, NanoTecCenter Weiz Forschungsgesellschaft mbH (Austria)
Emil J. W. List-Kratochvil, NanoTecCenter Weiz Forschungsgesellschaft mbH (Austria)
Technische Univ. Graz (Austria)


Published in SPIE Proceedings Vol. 9185:
Organic Field-Effect Transistors XIII; and Organic Semiconductors in Sensors and Bioelectronics VII
Zhenan Bao; Ruth Shinar; Ioannis Kymissis; Iain McCulloch, Editor(s)

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