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Proceedings Paper

Heteroepitaxy on high-quality GaAs on Si for optical interconnection on Si chip
Author(s): Masao Tamura; J. Palmer; T. Yodo; T. Saitoh
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Paper Abstract

Recent progress concerning GaAs on Si technology is discussed from the viewpoint of how to suppress the threading dislocation density in GaAs layers to the level of 104cm2 on the basis of recently obtained results. In particular, we consider the effects of new approaches for realizing two-dimensional growth, new materials of buffer layers and insertion layers, post-growth annealing, high energy ion implantation and the confinement of growth areas on the reduction of threading dislocation generation and propagation.

Paper Details

Date Published: 5 April 1995
PDF: 12 pages
Proc. SPIE 2400, Optoelectronic Interconnects III, (5 April 1995); doi: 10.1117/12.206302
Show Author Affiliations
Masao Tamura, Optoelectronics Technology Research Lab. (Japan)
J. Palmer, Optoelectronics Technology Research Lab. (Japan)
T. Yodo, Optoelectronics Technology Research Lab. (Japan)
T. Saitoh, Optoelectronics Technology Research Lab. (Japan)


Published in SPIE Proceedings Vol. 2400:
Optoelectronic Interconnects III
Ray T. Chen; Harvard Scott Hinton, Editor(s)

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