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Proceedings Paper

Control of defect complex formation in thermally quenched semi-insulating GaAs using capless laser processing
Author(s): Qiang Liu; Harry E. Ruda; Lech Z. Jedral; Ivoil P. Koutzarov; Chandima D. Edirisinghe
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Paper Abstract

The effect of Laser Processing (LP) on defect complex formation and dissociation in ITC-GaAs was investigated by Surface Photovoltage (SPV), Photoluminescence (PL) and C-V profiling measurements. We propose that the reduction in hole concentration on LP samples is caused by a complexing of CAs and a laser-induced primary point defect. A clear correlation was found between the introduction of this complex and sample characteristics: these include, enhanced SPV signals, reduced CAs related PL intensities and a nonuniform distribution of ionized acceptors. In this exploratory work, we have demonstrated the unique influence of LP on the distribution of isolated acceptors and the free carrier concentration.

Paper Details

Date Published: 10 April 1995
PDF: 5 pages
Proc. SPIE 2403, Laser-Induced Thin Film Processing, (10 April 1995); doi: 10.1117/12.206285
Show Author Affiliations
Qiang Liu, Univ. of Toronto (Canada)
Harry E. Ruda, Univ. of Toronto (Canada)
Lech Z. Jedral, Univ. of Toronto (Canada)
Ivoil P. Koutzarov, Univ. of Toronto (Canada)
Chandima D. Edirisinghe, Univ. of Toronto (Canada)


Published in SPIE Proceedings Vol. 2403:
Laser-Induced Thin Film Processing
Jan J. Dubowski, Editor(s)

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