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Proceedings Paper

AlGaAsSb as a top cell material for InP-based triple-junction solar cells
Author(s): Yiqiao Chen; Aaron Moy; Wentao Lu; Kan Mi; Peter P. Chow
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Paper Abstract

We report the design and fabrication of Al0.95Ga0.05As0.56Sb0.44/Al0.75Ga0.25As0.56Sb0.44 solar cell as a top cell for triple-junction cell grown on InP substrate. The digital alloy technique, capable to grow high quality materials with composition falling in miscibility gap, was employed to grow high quality Al(Ga)AsSb to realize Al(Ga)AsSb solar cells. A test Al0.95Ga0.05As0.56Sb0.44/Al0.75Ga0.25As0.56Sb0.44 cell grown by molecular beam epitaxy was fabricated and characterized. The measured energy conversion efficiency is up to 8.9% under simulated AM0 radiation for the Al0.95Ga0.05As0.56Sb0.44/Al0.75Ga0.25As0.56Sb0.44 cell without AR coating on cell surface.

Paper Details

Date Published: 17 September 2014
PDF: 5 pages
Proc. SPIE 9226, Nanophotonics and Macrophotonics for Space Environments VIII, 92260L (17 September 2014); doi: 10.1117/12.2062773
Show Author Affiliations
Yiqiao Chen, SVT Associates, Inc. (United States)
Aaron Moy, SVT Associates, Inc. (United States)
Wentao Lu, SVT Associates, Inc. (United States)
Kan Mi, SVT Associates, Inc. (United States)
Peter P. Chow, SVT Associates, Inc. (United States)


Published in SPIE Proceedings Vol. 9226:
Nanophotonics and Macrophotonics for Space Environments VIII
Edward W. Taylor; David A. Cardimona, Editor(s)

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