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Proceedings Paper

Realization of Si1-x-yGexCy/Si heterostructures by pulsed-laser-induced epitaxy of C+ implanted pseudomorphic SiGe films and of a-SiGeC:H films deposited on Si(100)
Author(s): Jacques Boulmer; A. Desmur-Larre; C. Guedj; D. Debarre; Philippe Boucaud; Francois H. Julien; Elieser Finkman; Keith A. Nugent; R. Laval; J.-B. Ozenne; H. Yang; D. Bouchier; Christian Godet; Pere Roca i Cabarrocas; G. Calvarin; C. Clerc
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Paper Abstract

Si1-x-yGexCy / Si heterostructures are realized by pulsed laser induced epitaxy (PLIE) from C+ implanted pseudomorphic Si0.84/Ge(subscript 0.16 films and from hydrogenated amorphous SiGeC films deposited on Si(100). The laser treated samples are examined by electron channeling, energy dispersive X-ray analysis, Rutherford backscattering spectroscopy, X-ray diffraction and Raman spectroscopy. First results show that laser induced epitaxy is effective, provided that laser fluence exceeds a threshold for which the melted depth is larger than the initial SiGeC layer. In addition, carbon incorporation in substitutional sites is demonstrated.

Paper Details

Date Published: 10 April 1995
PDF: 11 pages
Proc. SPIE 2403, Laser-Induced Thin Film Processing, (10 April 1995); doi: 10.1117/12.206273
Show Author Affiliations
Jacques Boulmer, Univ. Paris-Sud (France)
A. Desmur-Larre, Univ. Paris-Sud (France)
C. Guedj, Univ. Paris-Sud (France)
D. Debarre, Univ. Paris-Sud (France)
Philippe Boucaud, Univ. Paris-Sud (France)
Francois H. Julien, Univ. Paris-Sud (France)
Elieser Finkman, Technion--Israel Institute of Technology (Israel)
Keith A. Nugent, Univ. of Melbourne (Australia)
R. Laval, Univ. Paris-Sud (France)
J.-B. Ozenne, Univ. Paris-Sud (France)
H. Yang, Univ. Paris-Sud (France)
D. Bouchier, Univ. Paris-Sud (France)
Christian Godet, Ecole Polytechnique (France)
Pere Roca i Cabarrocas, Ecole Polytechnique (France)
G. Calvarin, Ecole Centrale de Paris (France)
C. Clerc, Univ. Paris-Sud (France)


Published in SPIE Proceedings Vol. 2403:
Laser-Induced Thin Film Processing
Jan J. Dubowski, Editor(s)

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