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Proceedings Paper

Laser chemical etching of copper films
Author(s): A. Aliouchouche; Jacques Boulmer; D. Debarre; B. Bourguignon; Jean-Pierre Budin
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Paper Abstract

Copper surface interactions with chlorine and carbon tetrachloride and a UV excimer laser are studied, in the context of applications to interconnects in microelectronic circuits. With Cl2, a highly reactive gas, the etching process is governed by bulk diffusion. With CCl4, which is less reactive, the limiting step is the creation of reactive species at the surface. The diffusion of active species in the gas phase is evidenced by a degree of nonuniformity of mm-sized etched spots.

Paper Details

Date Published: 10 April 1995
PDF: 10 pages
Proc. SPIE 2403, Laser-Induced Thin Film Processing, (10 April 1995); doi: 10.1117/12.206272
Show Author Affiliations
A. Aliouchouche, Univ. Paris-Sud (France)
Jacques Boulmer, Univ. Paris-Sud (France)
D. Debarre, Univ. Paris-Sud (France)
B. Bourguignon, Univ. Paris-Sud (France)
Jean-Pierre Budin, Univ. Paris-Sud (France)


Published in SPIE Proceedings Vol. 2403:
Laser-Induced Thin Film Processing
Jan J. Dubowski, Editor(s)

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