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Proceedings Paper

Monte Carlo simulations of reactive pulsed laser deposition
Author(s): Dale L. Capewell; David G. Goodwin
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Paper Abstract

The Direct Simulation Monte Carlo (DSMC) method for simulating rarified gasdynamics has been applied to the problem of pulses laser deposition. Both 1D and 2D axisymmetric simulations were carried out. In both, a source of silicon expands into the background gas of argon in the presence of a diffusely reflecting substrate. Density, temperature, and axial flow velocity for each species are computed as functions of position and time. Particle flux and energy incident on the substrate are also monitored as functions of time. The simulation results are in good agreement with experimental plume diagnostics and film growth rates vs. pressure data.

Paper Details

Date Published: 10 April 1995
PDF: 11 pages
Proc. SPIE 2403, Laser-Induced Thin Film Processing, (10 April 1995); doi: 10.1117/12.206271
Show Author Affiliations
Dale L. Capewell, California Institute of Technology (United States)
David G. Goodwin, California Institute of Technology (United States)

Published in SPIE Proceedings Vol. 2403:
Laser-Induced Thin Film Processing
Jan J. Dubowski, Editor(s)

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