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Proceedings Paper

Photoreflectance and photoluminescence spectroscopies of In-doped CdMnTe/CdTe multiple quantum wells and superlattices
Author(s): Daniel Labrie; Joel B. Aufgang; Jerzy M. Wrobel; Jan J. Dubowski; Piotr Becla
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Paper Abstract

Multiple quantum wells and superlattices of CdMnTe/CdTe were grown epitaxially on CdZnTe using Pulsed Laser Evaporation and Epitaxy from indium doped Cd.85Mn.15Te and high purity CdTe targets. The photoreflectance and photoluminescence spectra were collected at T equals 5-10 K. In addition to the photoreflectance signatures originating from the CdZnTe substrate, CdTe buffer layer and CdMnTe barrier layers, the spectra also display features that are attributed to optical transitions occurring within the CdTe quantum wells. The signatures were observed in several heterostructures with [001], [111], and [112] crystal orientations.

Paper Details

Date Published: 10 April 1995
PDF: 9 pages
Proc. SPIE 2403, Laser-Induced Thin Film Processing, (10 April 1995); doi: 10.1117/12.206270
Show Author Affiliations
Daniel Labrie, Dalhousie Univ. (Canada)
Joel B. Aufgang, Dalhousie Univ. (Canada)
Jerzy M. Wrobel, Univ. of Missouri/Kansas City (United States)
Jan J. Dubowski, National Research Council of Canada (Canada)
Piotr Becla, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 2403:
Laser-Induced Thin Film Processing
Jan J. Dubowski, Editor(s)

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