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Proceedings Paper

Fabrication of submicron relief gratings in p-GaAs in the process of maskless holographic wet etching by laser-induced etch rate reduction method
Author(s): Alexander I. Khudobenko; Vladislav Ya. Panchenko; Vladimir N. Seminogov
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Paper Abstract

We report the maskless holographic fabrication of submicron relief diffraction gratings with periods 230-500 nm and depth-to-spacing ratio as high as 0.5 on the surface of p- GaAs under visible laser light. The gratings were fabricated in the process of photochemical wet etching by laser-induced etch rate reduction method. The physical mechanism of laser-induced grating formation in p-type semiconductors is considered.

Paper Details

Date Published: 10 April 1995
PDF: 5 pages
Proc. SPIE 2403, Laser-Induced Thin Film Processing, (10 April 1995); doi: 10.1117/12.206266
Show Author Affiliations
Alexander I. Khudobenko, Scientific Research Ctr. for Technological Lasers (Russia)
Vladislav Ya. Panchenko, Scientific Research Ctr. for Technological Lasers (Russia)
Vladimir N. Seminogov, Scientific Research Ctr. for Technological Lasers (Russia)


Published in SPIE Proceedings Vol. 2403:
Laser-Induced Thin Film Processing
Jan J. Dubowski, Editor(s)

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