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Proceedings Paper

Laser processing of thin films for optoelectronic devices
Author(s): Hideo Sugiura
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Paper Abstract

This paper reviews the laser processing of II-VI and III-V compound semiconductors for optoelectronic devices. when a laser beam scanning system is combined with MBE or MOCVD apparatus, the resultant growth process is called laser-assisted epitaxy. Laser irradiation of the films has various effects, depending on the growth conditions: doping efficiency, film growth rate, and film composition are affected. Using these effects, laser-assisted epitaxy has been used to make photodetectors, laser diodes, and integrated devices for multiwavelength transmission.

Paper Details

Date Published: 10 April 1995
PDF: 10 pages
Proc. SPIE 2403, Laser-Induced Thin Film Processing, (10 April 1995); doi: 10.1117/12.206259
Show Author Affiliations
Hideo Sugiura, NTT Opto-electronics Labs. (Japan)


Published in SPIE Proceedings Vol. 2403:
Laser-Induced Thin Film Processing
Jan J. Dubowski, Editor(s)

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