Share Email Print
cover

Proceedings Paper

Deposition of silicon carbide thin films by pulsed-excimer-laser ablation technique in the (25-700)degree C deposition temperature range
Author(s): My Ali El Khakani; E. Gat; Yves Beaudoin; Mohamed Chaker; C. Monteil; Daniel Guay; G. Letourneau; Henri Pepin
Format Member Price Non-Member Price
PDF $17.00 $21.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Laser ablation deposition technique was used to deposit silicon carbide thin films on both Si(100) and quartz substrates. The deposition was accomplished by ablating SiC sintered ceramic targets, using a KrF (248 nm) excimer laser. At a laser intensity of about 1 X 109 W/cm2, substrate temperatures in the (25-700) degree(s)C range were investigated. When the deposition temperature is varied from 27 to 650 degree(s)C, (i) the density of a-SiC films increases from 2.6 to 3.0 g cm-3, while their mean roughness value (for a film thickness of about 1 micrometers ) slightly changes from 0.44 to 0.5 nm; (ii) the optical transmission of a-SiC films is significantly improved (the absorption coefficient at 632.8 nm wavelength was reduced by a factor of about 5); and (iii) their Si-C bond density, as determined by FTIR spectroscopy, increases from (13.1 +/- 1.3) to (23.4 +/- 2.4) 1022 bond cm-3. The increased number of Si-C bonds is correlated to the increase of the optical transmission. Over all the investigated deposition temperature range, the a-SiC films were found to be under high compressive stress around a mean value of about 1.26 GPa. The control of the stress of a-SiC films was achieved by means of post- thermal annealings and the annealed a-SiC films were successfully used to fabricate x-ray membranes.

Paper Details

Date Published: 10 April 1995
PDF: 11 pages
Proc. SPIE 2403, Laser-Induced Thin Film Processing, (10 April 1995); doi: 10.1117/12.206251
Show Author Affiliations
My Ali El Khakani, INRS-Energie et Materiaux (Canada)
E. Gat, INRS-Energie et Materiaux (Canada)
Yves Beaudoin, INRS-Energie et Materiaux (Canada)
Mohamed Chaker, INRS-Energie et Materiaux (Canada)
C. Monteil, INRS-Energie et Materiaux (Canada)
Daniel Guay, INRS-Energie et Materiaux (Canada)
G. Letourneau, INRS-Energie et Materiaux (Canada)
Henri Pepin, INRS-Energie et Materiaux (Canada)


Published in SPIE Proceedings Vol. 2403:
Laser-Induced Thin Film Processing
Jan J. Dubowski, Editor(s)

© SPIE. Terms of Use
Back to Top